www.goodark.com page 1 of 5 rev.2.2 SSF1020 100v n-channel mosfet absolute maximum ratings parameter max. units i d @t c =25? c continuous drain current,vgs@10v 60 i d @t c =100?c continuous drain current,vgs@10v 50 i dm pulsed drain current 240 a power dissipation 180 w p d @t c =25?c linear derating factor 2.0 w/? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 240 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range C55 to +175 ?c thermal resistance parameter min. typ. max. units r jc junction-to-case 0.83 r ja junction-to-ambient 62 ?c/w electrical characteristics @t j =25 ?c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 100 v v gs =0v,i d =250a r ds(on) static drain-to-source on-resistance 16 20 m v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 3.0 4.0 v v ds =v gs ,i d =250a g fs forward transconductance 58 s v ds =5v,i d =30a 1 v ds =100v,v gs =0v i dss drain-to-source leakage current 10 a v ds =100v, v gs =0v, t j =150?c id =60a bv=100v r ds(on) =16 m typ. features ? advanced trench process technology ? ultra low rdson, typical 16mohm ? high avalanche energy, 100% test ? fully characterized avalanche voltage and current ? lead free product description the SSF1020 is a new generation of middle voltage and high current nCchannel enhancement mode trench power mosfet. this new technology increases the device reliability and electrical parameter repeatability. SSF1020 is assembled in high reliability and qualified assembly house. applications ? power switching application SSF1020 top view (to-220)
www.goodark.com page 2 of 5 rev.2.2 SSF1020 100v n-channel mosfet gate-to-source forward leakage 100 v gs =20v i gss gate-to-source reverse leakage -100 na v gs =-20v q g total gate charge 90 q gs gate-to-source charge 14 q gd gate-to-drain("miller") charge 24 nc i d =30a v dd =30v v gs =10v t d(on) turn-on delay time 18.2 t r rise time 15.6 t d(off) turn-off delay time 70.5 t f fall time 13.8 ns v dd =30v i d =2a ,r l =15 r g =2.5 v gs =10v c iss input capacitance 3150 c oss output capacitance 300 c rss reverse transfer capacitance 240 pf v gs =0v v ds =25v f=1.0mhz source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 60 i sm pulsed source current (body diode) 240 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.3 v t j =25?c,i s =30a,v gs =0v t rr reverse recovery time 57 ns q rr reverse recovery charge 107 nc t j =25?c,i f =60a di/dt=100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, id = 40a, vdd = 50v pulse width300s, duty cycle1.5% ; rg = 25?? starting tj = 25c gate charge test circuit eas test c ircuit
www.goodark.com page 3 of 5 rev.2.2 SSF1020 100v n-channel mosfet switch time test circuit switch waveforms: transfer characteristic capacitance on resistance vs. junction temperature breakdown voltage vs. junction temperature
www.goodark.com page 4 of 5 rev.2.2 SSF1020 100v n-channel mosfet gate charge source-drain diode forward voltage safe operation area max drain c urrent vs. junction temperature transient thermal impedance curve
www.goodark.com page 5 of 5 rev.2.2 SSF1020 100v n-channel mosfet to220 mechanical data
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